Another good review article on the wide bandgap nitrides. 另一篇不错的宽能隙氮化物系列的论文。
Although the energy bandgap can be reduced in the dilute InGaAsN channel, the InGaAsN material must be growth in low temperatures. 虽然在砷化铟镓的材料中加入微量氮元素可以使其能隙下降，然而四元氮砷化铟镓材料却必须在低温下成长。
